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We have studied a bottom-gate polycrystalline-silicon thin-film transistor (poly-Si TFT) with amorphous-silicon (a-Si) n<sup>+</sup> contacts and center-offset gated structure, where intrinsic poly-Si is used in the center-offset region. The fabrication process is compatible with the conventional a-Si TFT with addition of thermal annealing for(More)
Optical subthreshold current method (OSCM) is proposed for characterizing the interface states in MOS systems using the current-voltage characteristics under a photonic excitation. An optical source with a subbandgap (E/sub ph/<E/sub g/) photonic energy (E/sub ph/=0.943 eV, P/sub opt/=+5 dBm), which is less than the silicon bandgap (E/sub g/=1.12;eV), is(More)
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