J. Alarcon-Salazar

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Nano-metric layers were obtained by reactive sputtering using different oxygen/argon (O/Ar) flow rates. Si and SiO targets were used to make SiO<sub>x</sub> films (x&#x2264;2) and these were annealed at three different temperatures, 600 &#x00B0;C, 900 &#x00B0;C and 1100 &#x00B0;C during 30 minutes, in N<sub>2</sub> ambient. The samples were characterized by(More)
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