J. A. Wikstrom

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A technique to directly measure the depletion capacitance between the inversion layer and the substrate in the determination of the doping profile under the gate of a MOS device is described. The measurement technique is less sensitive to stray capacitance and can be carried out under steady-state conditions.The technique, therefore, lends itself to direct(More)
An experimental study of flicker noise in CMOS devices, obtained from three different, production level, fabrication lines, indicates that the noise characteristics of the devices do not vary significantly amongst fabricators, or depend on the doping type of the CMOS well. Noise in NMOS may be modelled in all regions of device operation by a single measured(More)
The apparent drop-off in measured mobility that occurs in MOS transistors near threshold is shown to be due a reduction in extracted conductance in the device. The reduction in conducatance is explained in terms of an increased drain to source channel resistance arising from lateral inhomogeneities in the gate oxide. It is shown that by correcting for the(More)
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