Jürgen Carstensen

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Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable e.g. of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model:(More)
Silicon microwire arrays embedded in Cu present exceptional performance as anode material in Li ion batteries. The processes occurring during the first charging cycles of batteries with this anode are essential for good performance. This paper sheds light on the electrochemical and structural properties of the anodes during the first charging cycles.(More)
The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple(More)
UNLABELLED Si microwire array anodes have been prepared by an economical, microelectronics compatible method based on macropore etching. In the present report, evidence of the scalability of the process and the areal capacity of the anodes is presented. The anodes exhibit record areal capacities for Si-based anodes. The gravimetric capacity of longer anodes(More)
Cycling tests under various conditions have been performed for lithium ion battery anodes made from free-standing silicon microwires embedded at one end in a copper current collector. Optimum charging/discharging conditions have been found for which the anode shows negligible fading (< 0.001%) over 80 cycles; an outstanding result for this kind of anodes.(More)
: A process chain for a magnetoelectric device based on porous InP will be presented using only chemical, electrochemical, photoelectrochemical, photochemical treatments and the galvanic deposition of metals in high-aspect-ratio structures. All relevant process steps starting with the formation of a self-ordered array of current-line oriented pores followed(More)
The growth mechanism of currentline-oriented pores in n-type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ during pore etching and by theoretical calculations. Several pore growth parameters could thus be extracted in situ that are otherwise not obtainable. These include the space-charge-region (SCR) width,(More)
Electrochemical etching of semiconductors gives rise to a wide variety of self-organized structures including fractal structures, regular and branching pores. The Current-Burst Model and the Aging Concept are considered to describe the dynamical behavior governing the structure formation. Here the suppression of side-branching during pore growth is(More)
The dependence of the etch mechanism of lithographically seeded macropores in low-doped p-type silicon on water and hydrofluoric acid (HF) concentrations has been investigated. Using different HF concentrations (prepared from 48 and 73 wt.% HF) in organic electrolytes, the pore morphologies of etched samples have been related to in situ impedance spectra(More)