Jérémy Alvarez-Herault

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Magnetic Random Access Memory (MRAM) is an emerging technology with the potential to become the universal on-chip memory. Among the existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages compared to the others technologies: selectivity, single magnetic field and integration density. As any other types of(More)
Magnetic random access memory (MRAM) is an emerging technology with potential to become the universal on-chip memory. Among existing MRAM technologies, thermally assisted switching (TAS)-MRAM technology offers several advantages compared with other technologies: selectivity, single magnetic field, and high-integration density. In this paper, we analyze the(More)
Abstract—Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze resistive-bridge defects that may affect the TAS-MRAM(More)
In this work the characterization results of 1kbit TAS-MRAM arrays obtained through RIFLE Automated Test Equipment of 1Kbit array are reported. Such ATE, ensuring flexibility in terms of signals and timing, allowed evaluating hysteresis and to perform 50k write cycles in a very limited time, getting a first insight on TAS-MRAM arrays performance and(More)
Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze the impact of capacitive defects on the TAS-MRAM performance. Electrical(More)
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