Iwona Pasternak

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Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet(More)
We report an all-fiber, all-polarization maintaining (PM) ultrafast Tm-doped fiber laser mode-locked by a multilayer graphene-based saturable absorber (SA). The laser emits 603 fs-short pulses centered at 1876 nm wavelength with 6.6 nm of bandwidth and 41 MHz repetition rate. Graphene used as saturable absorber was obtained via chemical vapor deposition(More)
We report an all-fiber Tm-doped fiber laser mode-locked by graphene saturable absorber. The laser emits 1.2 ps pulses at 1884 nm center wavelength with 4 nm of bandwidth and 20.5 MHz mode spacing. The graphene layers were grown on copper foils by chemical vapor deposition (CVD) and transferred onto the fiber connector end. Up to date this is the shortest(More)
In this work we present for the first time, to the best of our knowledge, a passively synchronized thulium (Tm) and erbium (Er) doped fiber laser mode-locked by a common graphene saturable absorber (GSA). The laser consists of two ring resonators combined with a 90 cm long common fiber branch incorporating the saturable absorber (SA). Such laser generates(More)
We present for the first time to the best of our knowledge an all-fiber thulium (Tm) and erbium (Er) doped fiber laser simultaneously mode-locked by a common graphene saturable absorber. The laser consists of two ring resonators combined with a common saturable absorber (SA). The generated optical solitons have a full width at half maximum (FWHM) of 3.9 nm(More)
The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous(More)
In this Letter, we demonstrate a graphene mode-locked, all-fiber Ho-doped fiber laser generating 1.3 nJ energy pulses directly from the oscillator. The graphene used as a saturable absorber was obtained via chemical vapor deposition on copper substrate and immersed in a poly(methyl methacrylate) support. The laser generated ultrashort soliton pulses at 2080(More)
We report on generation of 260 fs-short pulses with energy of 1.1 nJ from a fully fiberized, monolithic Tm-doped fiber laser system. The design comprises a simple, graphene-based ultrafast oscillator and an integrated all-fiber chirped pulse amplifier (CPA). The system generates 110 mW of average power at 100.25 MHz repetition rate and central wavelength of(More)
In this paper a stretched-pulse, mode-locked Er-doped fiber laser based on graphene saturable absorber (SA) is presented. A 60 layer graphene/polymer composite was used as a SA. The all-fiber dispersion managed laser resonator with the repetition frequency of 21.15 MHz allows for Gaussian pulses generation with the full width at half maximum (FWHM) of 48(More)