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Spin Wave Devices (SWDs) are promising candidates for scaling electronics beyond the domain of CMOS. In contrast to traditional charge-based technologies, SWDs rely on propagating oscillation of magnetization as information carrier. Thanks to the intrinsic wave computation capability of these devices, the majority gate is implemented with low physical(More)
As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides, such as MoS2 and WSe2, have recently attracted(More)
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