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Quasi-particles with fractional charge and statistics, as well as modified Coulomb interactions, exist in a two-dimensional electron system in the fractional quantum Hall (FQH) regime. Theoretical models of the FQH state at filling fraction v = 5/2 make the further prediction that the wave function can encode the interchange of two quasi-particles, making(More)
In spin-based electronics, information is encoded by the spin state of electron bunches. Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far unexplored terahertz regime. Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin(More)
We demonstrate electrical control of the spin relaxation time T1 between Zeeman-split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W identical withT1(-1) by over an order of(More)
Recent theories suggest that the quasiparticles that populate certain quantum Hall states should exhibit exotic braiding statistics that could be used to build topological quantum gates. Confined systems that support such states at a filling fraction ν = 5/2 are of particular interest for testing these predictions. Here, we report transport measurements of(More)
We investigate the effect of Ho, Dy, Tb, and Gd impurities on the femtosecond laser-induced magnetization dynamics of thin Permalloy films using the time-resolved magneto-optical Kerr effect. Varying the amount of Ho, Dy, Tb content from 0% to 8%, we observe a gradual change of the characteristic demagnetization time constant from approximately 60 to(More)
Spin Wave Devices (SWDs) are promising candidates for scaling electronics beyond the domain of CMOS. In contrast to traditional charge-based technologies, SWDs rely on propagating oscillation of magnetization as information carrier. Thanks to the intrinsic wave computation capability of these devices, the majority gate is implemented with low physical(More)
Ultrashort flashes of THz light with low photon energies of a few meV, but strong electric or magnetic field transients have recently been employed to prepare various fascinating nonequilibrium states in matter. Here we present a new class of sources based on superradiant enhancement of radiation from relativistic electron bunches in a compact electron(More)
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the(More)
As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides, such as MoS2 and WSe2, have recently attracted(More)