Itsara Srithanachai

  • Citations Per Year
Learn More
In this paper, we propose a novel design of an electron accelerator on-chip by using a small scale device known as a PANDA microring resonator, which can be embedded within the solar cell device, where the trapped electron can be accelerated and moved faster to the final destination. Therefore, the solar cell efficiency can be improved. In principle, a(More)
Operation lifetime of the X-ray detector is the major factor that defines cost of detector or the actual operation cost of the detector. The purpose of this paper is to study the possibility of operation lifetime extension of the silicon x-ray detector. The study of the device's carrier generation lifetime before and after device exposed to the X-ray for 4(More)
In this article, we have studied contact between indium tin oxide (ITO) and n-type silicon. First, the characteristics of ITO thin films have been identified. The films have high transparent and low resistivity (&#x223C;88 % of transmittance and 2.8&#x00D7;10<sup>&#x2212;3</sup> &#x03A9;-cm). Fabrication of the ITO/n-Si photodetector was presented which was(More)
A new method of photodetector performance enhancement using an embedded optical accelerator circuit within the photodetector is proposed. The principle of optical tweezer generation using a light pulse within a PANDA ring is also reviewed. By using a modified add-drop optical filter known as a PANDA microring resonator, which is embedded within the(More)
Indium tin oxide (ITO) films were deposited on non-heated glass slide which prepared by RF sputtering system at room temperature. The temperatures of annealing were varied at 200, 300, 400 and 500 Celsius, respectively. Effect of oxygen flow on properties of ITO films has been studied. The optical properties were characterized by UV-Vis spectrophotometer.(More)
This paper presents a new result to improve the performance of P-N diode. The P-N diodes are fabrication using CMOS technology at TMEC. Electrical characteristics of P-N junction diode can be analyzed by current-voltage (I-V) measurement. This paper investigates X-ray irradiation by its electrical characteristics of difference X-ray exposure time. The X-ray(More)
This paper investigate characteristics of P-N diode before and after irradiated by X-ray at energy ranking about 40, 55 and 70 keV, exposure time 205 second. After irradiated leakage current at 40, 55 and 70 keV were decreased. Therefore, we explain the effect of the X-ray irradiated on diode because it can improve performance of diode. The 4 mm<sup>2</sup>(More)
The influence of annealing treatment on structure properties of the indium tin oxide (ITO) films has been investigated. ITO films annealed to improve quality films were prepared by RF sputtering system at 100 W. The samples at different thicknesses were deposited on non-heated glass slide at room temperature. Annealing temperature in pure nitrogen(More)
  • 1