István Bársony

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The high reactivity of the free silicon surface and its consequence: the "omnipresent" native silicon oxide hinder the interface engineering in many processing steps of IC technology on the atomic level. Methods known to eliminate the native oxide need in most cases vacuum processing. They frequently deteriorate the atomic flatness of the silicon. Hydrogen(More)
A novel MEMS thermopile structure is presented, in which the thermopairs act as dipole antennas. The induced current heats the hot point of the thermopairs. The thermoelectric output voltage is proportional to the absorbed radiation power. The antenna-like feature of the device is demonstrated by the dependence of the sensitivity on the polarization. 5.58(More)
Accurate knowledge of mechanical and thermal properties of structural materials used in MEMS is essential for optimum geometric and functional design. The extraction of precise physical properties is rather complicated due to the size effects, the complexity of the structures and the variations of formation processes. This work is intended to determine the(More)
Highly uniform and c-axis-aligned ZnO nanorod arrays were fabricated in predefined patterns by a low temperature homoepitaxial aqueous chemical method. The nucleation seed patterns were realized in polymer and in metal thin films, resulting in, all-ZnO and bottom-contacted structures, respectively. Both of them show excellent geometrical uniformity: the(More)
In our previously published paper [1, 2] we demonstrated that deuterium adsorbs on Si surface at room temperature much stronger than hydrogen [3, 4]. Moreover, in case of deuterium passivated wafers the vacuum storage can be omitted without risking the non-controlled native oxidation of silicon for up to 5 hours or more. It could be a suitable and more(More)
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