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Recent studies on the reliability of power Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), Metal Insulator Semiconductor-HEMTs (MISHEMTs) and p-gate HEMTs are reviewed. When submitted to high electric field values, gate and insulating dielectrics as well as defective epitaxial layers are prone to time dependent breakdown mechanisms, charge(More)
This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room(More)
GaN-based transistors are emerging as almost ideal devices for application in the power conversion field; however, several factors still limit their performance and reliability. This paper reviews the most common field-dependent degradation mechanisms in GaN-based power transistors. Based on the analysis of commercially-available devices we present data on:(More)
a r t i c l e i n f o This paper reports an analysis of the degradation mechanisms of GaN-based normally-off transistors submitted to off-state stress, forward-gate operation and electrostatic discharges. The analysis was carried out on transistors with p-type gate, rated for 600 V operation, developed within the European Project HIPOSWITCH. DC measurements(More)