Isabella Rossetto

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Recent studies on the reliability of power Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), Metal Insulator Semiconductor-HEMTs (MISHEMTs) and p-gate HEMTs are reviewed. When submitted to high electric field values, gate and insulating dielectrics as well as defective epitaxial layers are prone to time dependent breakdown mechanisms, charge(More)
This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room(More)
a Department of Information Engineering, University of Padova, Via Gradenigo 6/B, I-35135 Padova, Italy b Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Italy c Selex E.S., a Finmeccanica Company, via Tiburtina, km 12.400, 00131 Rome, Italy d 3-5 Lab/Thales Research & Technology, Route de Nozay, 91460 Marcoussis, France e(More)
GaN-based transistors are emerging as almost ideal devices for application in the power conversion field; however, several factors still limit their performance and reliability. This paper reviews the most common field-dependent degradation mechanisms in GaN-based power transistors. Based on the analysis of commercially-available devices we present data on:(More)