Irina Rashevskaya

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Apsel4well is a monolithic active pixel sensor (MAPS) chip intended for application to fast and low material silicon vertex trackers for future experiments at high intensity machines. The design is based on a 180 nm CMOS process with quadruple well option called INMAPS. This technology makes it possible to increase the in-pixel intelligence as compared to(More)
A model, approximating minority carrier diffusion with a discrete random walk and accounting for radiation induced reduction of minority carrier lifetime, is proposed to predict the effects of neutron irradiation on the charge collection properties of monolithic active pixel sensors (MAPS) in CMOS technology. The model has been implemented in a Monte Carlo(More)
The SuperB asymmetric e<sup>&#x002B;</sup> e<sup>&#x2212;</sup> collider has been designed to deliver a luminosity greater than 10<sup>36</sup> cm<sup>&#x2212;2</sup> s<sup>&#x2212;1</sup> maintaining moderate beam currents. Comparing to current B-Factories, the reduced center-of-mass boost of the SuperB machine requires an improved vertex resolution to(More)
In the frame of the INFN experiment REDSOX/REDSOX2 and in collaboration with Fondazione Bruno Kessler (FBK), Trento, we are developing trapezoidal-shaped monolithic arrays of Silicon Drift Detector (SDD) cells for low energy X-ray fluorescence (XRF) experiments. The shape of the individual SDD cell must be carefully selected in order to find the optimal(More)
Monolithic active pixel sensors featuring a time-invariant front-end channel have been fabricated in a quadruple well CMOS process in the frame of an R&amp;D project aiming at developing low material budget, radiation hard detectors for tracking applications. MAPS prototypes have been exposed to integrated fluences up to 10<sup>14</sup> 1 MeV neutron(More)
An Application Specific Integrated Circuit (ASIC) designed as front-end electronics for large area monolithic Silicon Drift Detectors (SDD) read-out has been developed and tested. The challenging framework of this project is the read-out of the large-area SDD detectors to be used for X-ray astronomy space missions and medical applications. Due to the(More)
We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm<sup>2</sup>, has been manufactured by optimizing the production processes in order to reduce the anode current,(More)
Silicon photomultipliers are silicon devices that in recent times have been proposed as candidates for the replacement of photomultiplier tubes in many experimental situations. In this article we describe the performance of SiPMs as a readout system of a shashlik calorimeter composed of 41 8&#x00D7;8 cm<sup>2</sup>, 3.27-mm-thick tiles of scintillator and(More)
In recent years Silicon Photomultipliers (SiPMs) have been proposed as a new type of readout system for scintillating detectors in many experiments. SiPMs consist of a matrix of parallel-connected silicon micro-pixels, which are independent photon counters working in limited Geiger mode with very high gain (&#x223C;10<sup>6</sup>). This contribution(More)
We report on extensive noise measurements performed on double-sided, AC-coupled, punch-through biased silicon strip detectors. We used a single-channel acquisition chain, reading one strip per side, all other strips being kept grounded. The noise has been measured over a wide range of peaking times and leakage currents, allowing a careful determination of(More)