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The International Technology Roadmap for Semiconductors lists F2 (1 = 157 nm) optical lithography and extreme ultraviolet next generation lithography as the two most feasible lithography solutions for the 70 nm technology node. It is likely that both of these solutions will be late, forcing ArF (1 = 193 nm) lithography to operate at unprecedented resolution(More)
At very high flight speeds, the radiative energy transfer occurring in the flow behind the shock wave modifies flowfield. The modified flowfield in turn affects the radiative energy transfer behavior. In the past space missions to the different planets as Mars and Venus, such phenomenon is believed to have occurred. Calculating such a phenomenon is(More)
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