Ioan Tudosa

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In magnetic memory devices, logical bits are recorded by selectively setting the magnetization vector of individual magnetic domains either 'up' or 'down'. In such devices, the fastest and most efficient recording method involves precessional switching: when a magnetic field B(p) is applied as a write pulse over a period tau, the magnetization vector(More)
We report the first observation of high wave vector magnon excitations in a ferromagnetic monolayer. Using spin-polarized electron energy loss spectroscopy, we observed the magnon dispersion in one atomic layer (ML) of Fe on W(110) at 120 K. The magnon energies are small in comparison to the bulk and surface Fe(110) excitations. We find an exchange(More)
The elementary surface excitations are studied by spin-polarized electron energy loss spectroscopy on a prototype oxide surface [an oxygen passivated Fe(001)-p(1×1) surface], where the various excitations coexist. For the first time, the surface phonons and magnons are measured simultaneously and are distinguished based on their different spin nature. The(More)
Nanoelectronic memory based on trapped charge need to be small and fast, but fundamentally it faces a voltage-time dilemma because the requirement of a high-energy barrier for data retention under zero/low electrical stimuli is incompatible with the demand of a low-energy barrier for fast switching under a modest programming voltage. One solution is to(More)
We present the first surface spin-wave (SW) dispersion measurements up to the surface Brillouin zone boundary of a two monolayer Fe film on W(110) by using spin-polarized electron energy loss spectroscopy. Pronounced features of SW peaks are observed in the spectra at room temperature. We found that the SW energies in the Fe film are strongly reduced(More)
New product applications have an increasing demand for a non-volatile memory (NVM) exhibiting higher speeds, extended endurance and lower power consumption as existing solutions are not fully capable to deliver on all of these attributes. Of the group of new NVMs, Phase-change RAM (PRAM), Resistive RAM (RRAM) and Spin-Transfer Torque based MRAM (STT-MRAM)(More)
We have studied the magnetic reversal and thermal stability of [Co(0.3 nm)/Pd(0.7 nm)]N multilayers patterned into 35-nm-diameter nanodot arrays. The short-time coercive fields are relatively constant with N while the room-temperature thermal stability parameter increases nearly linearly with N. However the magnetic switching volume extracted from the(More)
Applying one ultrashort magnetic field pulse, we observe up to 10 precessional switches of the magnetization direction in single crystalline Fe films of 10 and 15 atomic layers. We find that the rate at which angular momentum is dissipated in uniform large angle spin precession increases with time and film thickness, surpassing the intrinsic ferromagnetic(More)
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