Inn Swee Goh

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It is discovered that Si Epitaxy causes charge to breakdown (Qbd) failure of mainly high voltage (HV) PMOS capacitors at shallow trench isolation (STI) intensive structure during the qualification of 0.15um embedded Flash memory process, and this Qbd failure rate is strongly related to the densification anneal process for STI gapfill oxide. It is confirmed(More)
This paper discussed specifically by focusing on failure analysis study for the successful fault isolation of bit line to bit line (BL) leakage and the formation mechanism of electrical conducting path inside inter level dielectric (ILD) oxide between bit lines in flash cell arrays that has extra topography resulting from two stacked poly-Si layers, which(More)
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