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A comparative study is made of the low-frequency noise (LFN) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Al<sub>2</sub>O<sub>3</sub> and(More)
Low-frequency noise (LFN) characteristics have been studied in polycrystalline- TiO<sub>x</sub>-based resistive random access memories (RRAMs). LFNs are proportional to 1/<i>f</i> in high-resistance(More)