Imran Khalid

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—A 2 31 1 pseudorandom binary sequence (PRBS) generator with adjustable output data rates up to 80 Gb/s is reported in a production 130-nm BiCMOS process with 150-GHz SiGe heterojunction bipolar transistor (HBT). The pseudorandom sequence is generated at 20 Gb/s using a linear feedback shift register (FSR), which is then multiplexed up to 80 Gb/s with a 4:1(More)
— This paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe BiCMOS, and InP-HBT 30-80 Gb/s high-speed circuit in production 130-nm SiGe BiCMOS and InP HBT technologies are compared.
We report the derivation and characterization of two new human embryonic stem cells (hESC) lines (CU1 and CU2) from embryos with an irreversible loss of integrated organismic function. In addition, we analyzed retrospective data of morphological progression from embryonic day (ED) 5 to ED6 for 2480 embryos not suitable for clinical use to assess grading(More)
  • Ahmed Al-Ostaz, Anipindi Ae, Ae Diwakar, I Khalid, Alzebdeh
  • 2007
The variation of arrangement of micro-structural entities (i.e. inclusions) influences local properties of composites. Thus, there is a need to classify and quantify different micro-structural arrangements. In other words, it is necessary to identify descriptors that characterize the spatial dispersion of inclusions in random composites. On the other hand,(More)
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