The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe BiCMOS, and InP-HBT 30-80 Gb/s high-speed circuit in production 130-nm SiGe BiCMOS and InP HBT technologies are compared.
This paper presents an analysis of sub-2.5-V topologies and design methodologies for SiGe BiCMOS and sub-90nm CMOS building blocks to be used in the next generation of 40-100 Gb/s wireline transceivers. Examples of optimal designs for 40-80Gb/s broadband low-noise input comparators, low-voltage high-speed MOS- and BiCMOS CML logic gates, 30-100 GHz… (More)
We report the derivation and characterization of two new human embryonic stem cells (hESC) lines (CU1 and CU2) from embryos with an irreversible loss of integrated organismic function. In addition, we analyzed retrospective data of morphological progression from embryonic day (ED) 5 to ED6 for 2480 embryos not suitable for clinical use to assess grading… (More)
Autophagy is a protein degradation process within the cell and its deregulation has been linked to various diseases and the formation of cancer. Both mTOR and Beclin-1 are important proteins involved in the regulation of autophagy process and tumorigenesis. The aims of the study were to assess the expression of autophagic-related proteins in breast cancer… (More)