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We have presented the data showing the drift of PCM parameters over a broad range of times. We have proposed a simple analytical model to explain our observations through inherent structural relaxations in a glass and described by the double well potential concept that predicts the temporal and saturation dependencies of drift phenomena. Our model correctly(More)
Filament growth is a key aspect in the operation of bipolar resistive random access memory (RRAM) devices, yet there are conflicting reports in the literature on the direction of growth of conductive filaments in valence change RRAM devices. We report here that an insulating gap between the filament and the semiconductor electrode can be detected by the(More)
Memory elements existing and under research are compared for their suitability in computer memory applications. Cross point arrays of phase change elements with matched isolation devices are found to be particularly attractive and the challenge to model them is analyzed.
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