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revealed the missing link between resistive switching and memristors. In addition to being used in the next generation nonvolatile memories , the memristor is also a promising candidate to extend Moore's law beyond physical limits and implement beyond von-Neumann computing because only one memristor is needed to compute and store basic logic functions(More)
Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO3 memristors(More)
Memristive devices are popular among neuromorphic engineers for their ability to emulate forms of spike-driven synaptic plasticity by applying specific voltage and current waveforms at their two terminals. In this paper, we investigate spike-timing dependent plasticity (STDP) with a single pairing of one presynaptic voltage spike and one post-synaptic(More)
Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching (BRS) in YMnO3/Nb:SrTiO3 pn-heterojunctions. A thermally driven electroforming process is required prior to the observed BRS. Results indicate that the(More)
The optoelectronic applications of Si are restricted to the visible and near-infrared spectral range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance, has been a long-standing scientific challenge for many decades since most photons with sub-band gap energies pass through Si unabsorbed. This fundamental shortcoming,(More)
The influence of the bottom electrode/substrate on the resistive switching behavior of YMnO<sub>3</sub> thin films was investigated. Unipolar resistive switching was observed when Pt/Ti/SiO<sub>2</sub>/Si and Pt/Al<sub>2</sub>O<sub>3</sub> were employed as a bottom electrode/substrate. YMnO<sub>3</sub> deposited on a SrTiO<sub>3</sub> doped with Nb exhibits(More)
BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused(More)
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