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The effects of pH and dissolved oxygen (DO) on the reduction of Cr(VI) by dissolved Fe(II) were investigated for aqueous solutions having relatively low buffering capacities. All solutions were maintained at a constant ionic strength (generally 0.05 M) and temperature (23 +/- 2 degrees C). For the majority of the experiments conducted, initial(More)
After rapid thermal annealing (RTA), deep levels were found to be generated in Au/GaAs Schottky diodes embedded with InAs quantum dots grown by migration enhanced molecular beam epitaxy (MEMBE). From the corner frequency of the 1/f2 part of the low-frequency noise specrtral density, the locations of the deep levels were estimated to be 0.58, 0.61, and 0.66(More)
In this work analytic model for generation of excess low-frequency noise in nanorod devices such as field-effect transistors are developed. In back-gate field-effect transistors where most of the surface area of the nanorod is exposed to the ambient, the surface states could be the major noise source via random walk of electrons for the low-frequency or 1/f(More)
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