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  • S. Cho, Gwangdoo Jo, Young-Kwang Kim, Il-Hun Son, Hyuck-In Kwon, Jong-Ho Lee
  • Materials Science
  • IEEE Silicon Nanoelectronics Workshop
  • 2008 (First Published: 1 June 2008)
  • The enhancement of carrier mobility by strain is necessary to improve transistor performance with scaling down. Especially the technique of inducing strain by using a tensile or compressive nitrideContinue Reading