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SUMMARY Efforts have been devoted to maximizing memory array densities. However, as the devices are scaled down in dimension and getting closer to each other, electrical interference phenomena among devices become more prominent. Various features of 3-D memory devices are proposed for the enhancement of memory array density. In this study, we mention 3-D(More)
Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-han Park, Hyun-Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-lo Ahn, Jiyoung Lee, Jong-hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon(More)
Mechanical deformation in incompressible linear and nonlinear magnetic materials was evaluated using various conventional electromagnetic volume and surface force density methods. These conventional force density methods are the Maxwell stress tensor method, Korteweg-Helmholtz force density method ͑KH͒, magnetic charge method, magnetizing current method,(More)
SUMMARY One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implanta-tion is inevitable. In this study, the dependency of current(More)
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