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Fibres from oil palm empty fruit bunches, generated in large quantities by palm oil mills, were processed into self-adhesive carbon grains (SACG). Untreated and KOH-treated SACG were converted without binder into green monolith prior to N2-carbonisation and CO2-activation to produce highly porous binderless carbon monolith electrodes for supercapacitor(More)
The mechanism of forming-free bipolar resistive switching in a Zr/CeOx/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrOy layer at the Zr/CeOx interface. X-ray diffraction studies of CeOx films revealed that they consist of nano-polycrystals embedded in a(More)
An improvement in resistive switching (RS) characteristics of CeO2-based devices has been reported by charge transfer through Al metal as a dopant. Moreover, density functional theory (DFT) calculations have been performed to investigate the role of Al-layer sandwiched between CeO2 layers by the Vienna ab initio simulation package (VASP). Total density of(More)
The paper reports on the effect of spin coating rate during the sol-gel process on the microstructure, grain size, surface roughness and thickness of barium strontium titanate (Ba0.6Sr0.4TiO3) thin films. Variable coating rates do not influence the microstructure of the films. All films are polycrystalline and single phase, as was found from X-ray(More)
Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As(More)
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