Igor E. Anokhin

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Electrical characteristics and neutron dosimetry properties of silicon based p-i-n diodes are presented in support of the applications in the sensors for beam monitoring and medical physics. Both the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of silicon planar p-i-n diode sensors with cylindrical geometry have been theoretically(More)
A model which describes the type conductivity inversion and the Fermi level stabilisation in high purity n-silicon under last neutron irradiation has been considered. This model takes into account shallow impurities, oxygen, A- and E-centres and deep amphoteric centres (the vacancy complexes). The role of divacancies is dominant in the Fermi level(More)
A novel technique for separating the out-of-field proton and neutron dose is presented. The technique combines measurements from special pin diodes sensitive to the non ionizing energy losses of protons and neutrons in silicon and standard clinical absorbed dose measurements. Preliminary testing shows good agreement with results from a GEANT4 study.
Calculations of responses for experimentally studied silicon planar structures (epitaxial single-strip silicon diodes) have been carried out for various profiles of microbeams. The spatial distribution of responses on the microbeam radiation therapy (MRT) beams has been calculated taken into account both electrical field distribution inside of the detector(More)
The electrical characteristics and neutron dosimetry properties of silicon based p-i-n diodes are presented in support of applications of the sensors in beam monitoring and medical physics. Both the current-voltage and capacitance-voltage characteristics of silicon planar p-i-n diode sensors with cylindrical geometry have been calculated and experimentally(More)
Because of very high intensity and pulsed nature of synchrotron radiation the nonlinear effects in recombination-generation kinetics must be taken into account in the response of silicon diodes under irradiation. Dependences of the charge carrier lifetime and the ambipolar diffusion coefficient on the excess carrier density generated by the synchrotron(More)
Silicon strip detectors with converters of neutrons into charge particles can be used as neutron position sensitive detectors. Such detectors are needed, for example, for high energy and neutron physics. The possibility of using the silicon strip detector coated with a polyethylene film for the coordinate determination of fast neutrons has been discussed.(More)
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