Iftikhar Ahmad Niaz

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Capacitance-Voltage (C-V) & Ballistic Current-Voltage (I-V) characteristics of Double Gate (DG) Silicon-on-Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger-Poisson solver taking into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other(More)
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