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Journals and Conferences
Demonstrated that quantum devices functioning by using of non-equilibrium boundary effects may to reach characteristics comparable with characteristics of traditional devices of microelectronics.
The conditions for existence of non-single solutions of charge transport equations in substrate of RTD are formulated.
Potential relief for electrons resonant tunneling is possible using two Schottky contacts with thin semiconductor film. Current-voltage characteristics calculated are N-shaped.
It is shown that under some conditions electric characteristics of quantum wire (QW) are completely determined by physical properties and topology of contact areas. New transistor types on the basis… (More)
The electric characteristics of a device based on two crossed quantum wires are calculated. It was demonstrated that the different functionalities may be realized using such a device. The design of… (More)