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The effect of C-protein on the actin-activated ATPase of column-purified skeletal muscle myosin has been investigated at varied ionic strength. At ionic strengths below about 0.1, C-protein is a potent inhibitor. The inhibition is not reversed by increasing the actin concentration, showing that it is caused by C-protein bound to the myosin filaments. When(More)
Epilayers of erbium-doped GaN (GaN:Er) were synthesized by metal-organic chemical vapor deposition, and the optical excitation cross section (σ(exc)) of Er ions in this host material were determined. Photoluminescence (PL) measurements were made using laser diodes at excitation wavelengths of 375 and 405 nm, and the integrated emission intensity at 1.54 μm(More)
The potential of Er-doped Al x In 0:1 Ga 0:9Àx N quaternary alloys as high-temperature thermoelectric (TE) materials has been explored. It was found that the incorporation of Er significantly decreased the thermal conductivity () of Al x In 0:1 Ga 0:9Àx N alloys. The temperature-dependent TE properties were measured up to 1055 K for an Er and Si co-doped(More)
Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al(0.75)Ga(0.25)N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al2O3. Optical loss at 1.54 μm in these waveguide structures has been measured.(More)
Er doped GaN (GaN:Er) p-in structures were prepared by metal organic chemical vapor deposition. Effects of growth pressure on the optical performance of GaN:Er p-in structures have been investigated. Electroluminescence measurements revealed that the optimal growth pressure window for obtaining strong infrared emission intensity at 1.54 µm is around 20(More)
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