I-wen Feng

Learn More
Epilayers of erbium-doped GaN (GaN:Er) were synthesized by metal-organic chemical vapor deposition, and the optical excitation cross section (σ(exc)) of Er ions in this host material were determined. Photoluminescence (PL) measurements were made using laser diodes at excitation wavelengths of 375 and 405 nm, and the integrated emission intensity at 1.54 μm(More)
The potential of Er-doped Al x In 0:1 Ga 0:9Àx N quaternary alloys as high-temperature thermoelectric (TE) materials has been explored. It was found that the incorporation of Er significantly decreased the thermal conductivity () of Al x In 0:1 Ga 0:9Àx N alloys. The temperature-dependent TE properties were measured up to 1055 K for an Er and Si co-doped(More)
Er doped GaN (GaN:Er) p-in structures were prepared by metal organic chemical vapor deposition. Effects of growth pressure on the optical performance of GaN:Er p-in structures have been investigated. Electroluminescence measurements revealed that the optimal growth pressure window for obtaining strong infrared emission intensity at 1.54 µm is around 20(More)
  • 1