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Abstract A variety of process modules where developed on 4” GaN on SiC substrates to support a 0.25μm HEMT technology based on i-line photolithographic tools. The technological developments to be discussed pertain to a bi-layer photo-resist shrink on top of Silicon Nitride stress-optimized films; a low-damage inductively-coupled plasma etch, to tailor the(More)
This paper presents the development of a newly available GaN HEMT technology portfolio and focuses on fabrication, RF characterization, reliability performance and device modeling. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests. The GaN HEMT technologies enable(More)
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