I. Rodríguez-Vargas

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The study of the electronic structure in GaAs-based delta-doped field effect transistors under applied hydrostatic pressure is presented. A combination of the depletion approximation and the local density Thomas-Fermi theory is used to model the potential energy profile. We present a discussion on the possible effect of the hydrostatic pressure in the(More)
Graphene has proven to be an ideal system for exotic transport phenomena. In this work, we report another exotic characteristic of the electron transport in graphene. Namely, we show that the linear-regime conductance can present self-similar patterns with well-defined scaling rules, once the graphene sheet is subjected to Cantor-like nanostructuring. As(More)
We present a Thomas–Fermi-based envelope function calculation of the electronic structure for n-type double d-doped GaAs quantum wells under the influence of applied hydrostatic pressure. An empirical formula for the electron mobility is used to qualitatively describe some transport properties in the system. The optimal interwell distance and hydrostatic(More)
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