I-Hsieh Wong

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In-situ CVD doping and laser anneal can reach [P] and tensile strain as high as 2×10<sup>20</sup> cm<sup>-3</sup> and 0.34%, respectively, in Ge on SOI with low defect density and high activation(More)
The low channel doping concentrations of 1.2×10<sup>19</sup> cm<sup>−3</sup> to deplete the channel and the high S/D doping of 1.2×10<sup>20</sup> cm<sup>−3</sup> to reduce the S/D resistance are(More)
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