I. García López

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In this work, a modulator driver in a 0.25 &#x00B5;m SiGe:C complementary BiCMOS technology with f<inf>T</inf>/f<inf>max</inf> of 110 / 180 GHz for the npn and 95 / 140 GHz for the pnp transistor is presented. The driver is implemented following an H-bridge topology, taking advantage of the availability of the pnp HBTs, and delivers a differential output(More)
This paper presents the design and characterization of a monolithically integrated optical transmitter fabricated in the 0.25 &#x00B5;m SiGe:C BiCMOS EPIC technology of IHP. The prototype comprises a 15-segment depletion-type Si Mach-Zehnder modulator (MZM) with total length of 5.67 mm and multichannel driver amplifier exhibiting integrated 4-bit(More)
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