I. Doi

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For LOCOS application, silicon nitride (SiN x) insulators have been deposited by ECR–CVD at room temperature and with N 2 flows of 2.5, 5, 10 and 20 sccm on pad-SiO 2 /Si or on Si substrates. The obtained SiN x /Si structures were used to analyze the SiN x characteristics. FTIR analyses reveal the presence of Si–N and N–H bonds. The refractive indexes(More)
Silicon oxynitride (SiO x N y) and nitride (SiN x) insulators have been deposited or grown (with or without silane in the gas mixture, respectively) by electron cyclotron resonance (ECR) plasmas on Si and/or GaAs substrates at room temperature (20 jC) and low pressures (up to 10 mTorr). Chemical bonding characteristics of the SiO x N y and SiN x films were(More)
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