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For LOCOS application, silicon nitride (SiN x) insulators have been deposited by ECR–CVD at room temperature and with N 2 flows of 2.5, 5, 10 and 20 sccm on pad-SiO 2 /Si or on Si substrates. The obtained SiN x /Si structures were used to analyze the SiN x characteristics. FTIR analyses reveal the presence of Si–N and N–H bonds. The refractive indexes(More)
Ultra-thin silicon oxide (SiO<sub>2</sub>) insulating films have been obtained by rapid thermal oxidation (RTO) and annealing (RTA), using different temperatures of 600, 700, 800 and 960degC for 40s, in oxygen and nitrogen, respectively. Characterization by Ellipsometry (for fixed refractive index of 1.46), transmission electron microscopy (TEM), Fourier(More)
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