I-Chuan Yao

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This study investigates the resistive switching behavior of Ga-doped ZnO (GZO) nanorod thin films with various Ga/Zn molar ratios. Vertically well-aligned and uniform GZO nanorod thin films were successfully grown on Au/Ti/SiO(2)/p-Si substrates using an aqueous solution method. X-ray diffraction (XRD) results indicate that GZO nanorods have [0001] highly(More)
The ZnO nanorods on ZnO/Si substrates were synthesized by using the low temperature growth aqueous solution method. The chemical and plasma etching treatments were carried out on the as-grown ZnO nanorods to provide the nanorods with various tip angles. The crystal structure and morphology of the ZnO nanorods were examined by x-ray diffraction (XRD),(More)
Fabrication, optical, and field emission properties of ZnO nanorod, nanopagoda, and nanotip emitters were studied. The ZnO nanotip emitters are prepared by using combination of solution method and oxygen plasma treatment. All the emitters exhibit a highly c-axis preferred orientation crystalline structure. The nanopagoda and nanotip emitters have turn-on(More)
The fabrication, optical, and field emission properties of ZnO-based nanorod emitters were studied. Ga-doped ZnO nanorods combined with the formation of tip structure on top of a ZnO nanorod by oxygen plasma treatment are employed to improve the field emission properties of the nanorod emitters. By either of these two methods, the nanorod emitters exhibit(More)
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