Hyungtak Kim

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The noble synthesis method for hydroxyapatite (HAp) nanoparticles was exploited using a fairly simple reaction of Ca(OH)(2) and H(3)PO(4), which does not generate residual harmful anions and consequently does not need an additional washing process. HAp nanoparticles were found to yield from dicalcium phosphate dehydrate (DCPD) as the only intermediate(More)
We have developed a high-quality SiO2 deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of ∼12 MV/cm was achieved using the optimized deposition(More)
We have fabricated field-plated AlGaN/GaN Heterostructure Field Effect Transistors(HFETs) on Si substrate for high voltage operation and submitted the devices to the DC stress tests to investigate the degradation phenomena. The devices were stressed under two different types of bias configuration including on-state with high current and off-state with low(More)
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