Hyungtak Kim

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—We have developed a high-quality SiO 2 deposition process using an inductively coupled plasma chemical vapor de-position system for use as a gate oxide of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of ∼12 MV/cm was achieved using the optimized deposition(More)
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