Hyunggeun Kang

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We present a new advanced 0.18um BCD(Bipolar-CMOS-DMOS) technology with the key features being a 40V HV-MOS and an SSTC(Sidewall Selective Transistor Cell) type EEPROM as well as complimentary available analog devices such as a high gain BJT, 4fF/um<sup>2</sup> MIM capacitor, and 10k &#x2126;/sq. poly resistor. To reduce device area and enhance latch up(More)
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