Hyung Nyuck Cho

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We proposed and fabricated a depletion-mode amorphous indium-gallium-zinc-oxide thin-film transistor gate driver without any additional signals. The proposed gate driver successfully exhibited a high-voltage output pulse without distortion at a clock frequency of 100 kHz, which is enough to drive a high-frequency panel with a frame rate of ~360 Hz and a(More)
It is the report on bi-directional integrated a-Si gate driver circuit for LCD Panel with RGBW quad subpixels. RGBW quad subpixels arrangement reduces 1/3 of data lines as well as increases brightness by almost 50%. The direction of vertical scan can change depending on the polarity of two control signals, i.e. Vdd_F and Vdd_R.Iintegrated a-Si gate driver(More)
We proposed and fabricated a new depletion-mode amorphous indium-gallium-zinc-oxide thin-film-transistor (TFT) shift register with a node-shared structure. The proposed shift register requires 14 TFTs, 3 clock lines, and 3 power source lines for two output pulses, whereas the previous shift registers consisted of more than 22 TFTs, 4 clock lines, and 6(More)
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