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Journals and Conferences
An anodic etching technique for selective lateral wet etching of n-doped GaN without the photo-assistance was described. N-doped GaN was successfully etched with 0.3 M oxalic acid at 40 V.
GaNSb films on the N-rich side have been grown on sapphire substrate at various growth temperatures by MOCVD. The optical properties of the grown films were characterized by absorption spectroscopy… (More)