Hyun-Woong Kim

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A 33-dBm <i>P</i> 0.1-dB single-pole double-throw antenna switch is designed and implemented using a standard 0.18-mum CMOS process at 1.8 GHz. An analysis shows a relation between parasitic junction capacitors and substrate resistance for low insertion loss (IL). The power-handling capability of the switch was also investigated through the voltage dividing(More)
A high-power single-pole-double-throw (SPDT) antenna switch using a differential architecture and a multi-section impedance transformation technique is demonstrated in a standard 0.18-&#x00B5;m CMOS process. The differential architecture prevents unwanted channel formation of OFF-state Rx switch transistors by relieving the voltage swing over the Rx switch(More)
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