Hyukjoo Son

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In this work, a metal-insulator-silicon (MIS) structure with a silicon nitride (SiNx) film, in which silicon nanocrystals (Si-NCs) are embedded as a gate insulator layer, was fabricated on needle-like silicon nanosurfaces. The MIS structure with Si-NCs embedded within the SiNx on the needle-like silicon nanosurface can be used to fabricate nonvolatile(More)
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