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—While NAND flash memory is used in a variety of end-user devices, it has a few disadvantages, such as asymmetric speed of read and write operations, inability to in-place updates, among others. To overcome these problems, various flash-aware strategies have been suggested in terms of buffer cache, file system, FTL, and others. Also, the recent development(More)
Recent development of next generation non-volatile memory types such as MRAM, FeRAM and PRAM provide higher commercial value to Non-Volatile RAM (NVRAM). In this paper, we suggest the utilization of small-sized, next-generation NVRAM as a write buffer to improve the overall performance of NAND flash memory-based storage systems. We propose a novel(More)
By using small-sized, next-generation NVRAM (such as MRAM, FeRAM and PRAM) as a write buffer, we can improve the overall performance of the NAND flash memory-based storage systems. However, traditional address mapping algorithms in Flash Translation Layer (FTL) software were designed without any consideration of the existence of write buffer. In this paper,(More)
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