Hyo Bum Song

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UNLABELLED In this study, we have fabricated vertical organic light emitting transistors using indenofluorenedione derivatives (IF-dione-F) as an n-type organic semiconductor. IF-dione-F shows high performance n-type semiconductors owing to the fluorine group in the IF-dione-F backbone. The fluorine group has an electron-withdrawing property. Thus,(More)
In this study, we fabricated and studied the device characteristics of vertical organic transistors consisting of nano-patterned gates constructed from the self-assembly of block copolymer. The size of the gate opening made by the new method was 30~40 nm. The device was compared with those which had gate openings of 200 nm. These lager devices were(More)
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