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Journals and Conferences
The pattern size is reduced as the device is more integrated. The resist deformation phenomenon has been a serious problem for under 100 nm line width patterns. In this study, a simulation tool for pattern collapse is created by using the existing beam sway model, and the effects of resist profile that exert on the pattern collapse have been studied. The… (More)
Making an accurate and quick critical dimension (CD) prediction is required for higher integrated device. Because simulation tools are consisted of many process parameters and models, it is hard that process parameters are calibrated to match with the CD results for various patterns. This paper presents a method of improving accuracy of predicting CD… (More)
EUV mask absorber sidewall angle should be measured for mask Optical Proximity Correction and shadow effect estimation. Hence, verifying the three-dimensional profile of mask topography has become a challenge in EUV mask inspection. This paper evaluates EUV mask sidewall angle measurement by Field-Emission Critical Dimension (CD)-Scanning Electron… (More)
In this paper, we find a tolerance value which can maintain the processible aerial image is obtained, the error limit caused by mask structure on non-planar multilayer film and its data base is constructed. Consequently, the EUV source reflected from uneven and sloped mask, the resultant aerial image and CD variation caused by above effect is analyzed.
Photoresist lithography has been applied to the fabrication of micro/nano devices, such as microfluidic structures, quantum dots, and photonic devices, in MEMS (micro-electro mechanical systems) and NEMS (nano-electro-mechanical systems). In particular, nano devices can be expected to present different physical phenomena due to their three-dimensional (3D)… (More)
We measured the temperature change of 193 nm chemically amplified resist during post exposure bake and investigated the effects of these variations on photoresist (PR) simulation. The effects of the variations were studied for various baking and cooling methods. The effective PEB time was determined by considering the temperature variation during PEB. The… (More)
It is helpful in lithography process and developing resist to know the relationship between the critical dimension variation and simulation parameters such as aerial image parameters, the Dill exposure parameters, PEB (Post Exposure Bake) parameters, and development parameters. In this paper the profiles of a 193 nm CAR (Chemically Amplified Resist) were… (More)
The threshold resist model based on only aerial image is less time consuming and is sometimes more efficient than the full simulation model based on mathematically analyzing the whole complicated process of photolithography. But this model still contains a disadvantage that the prediction is limited in various situations. In this paper, the new threshold… (More)
We developed a simulator that can predict spin coated resist thickness with different feature type, density and topology by using dimensionless parameter and liquid resist film thickness. The change of critical dimension with surrounding topology and pattern density is simulated for the non-uniform resist thickness.
In general, it is very hard to correctly predict the elongated contact hole resist reflow process ( CH RRP) due to position shift and pattern size irregularity of RRP, because simple RRP simulator uses isotropic resist flow. Therefore RRP simulator was upgraded which can correctly predict the elongated CH RRP by adding the bulk effect and anisotropic… (More)