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Extensive single event effects tests were performed on a new generation, the R6 process, of radiation-hardened 600-volt and 250-volt power metal-oxide semiconductor field-effect transistors (MOSFETs) from international rectifier using two different ions (krypton and xenon) at many different beam energies, Bragg peak positions, and drain and gate biases.(More)
—This paper discusses issues concerning single-event burnout (SEB) and single-event gate rupture (SEGR); explains and provides a basic overview of the preferred test conditions and procedures that would yield the most meaningful test results in evaluating power MOSFETs' SEB susceptibilities, describes how to correctly identify SEB and SEGR failure modes to(More)
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