Hung-Yen Tai

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Highly scaled GaN T-gate technology offers devices with high f<sub>t</sub>/f<sub>MAX</sub>, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (P<sub>out</sub>) of 1.3 W at power added efficiency (PAE) of 27%(More)
In this paper, a new twin gated-diode (T-GD) method has been greatly improved for the oxide interface characterization of MOS devices with gate oxide as thin as 1 nm (EOT). With the scaling of gate oxide thickness into 1 nm regime, reported GD measurement can not give correct measurement due to gate tunneling leakage current. Here, we provide a simple(More)
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