Hung-Yen Tai

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In this paper, a new twin gated-diode (T-GD) method has been greatly improved for the oxide interface characterization of MOS devices with gate oxide as thin as 1 nm (EOT). With the scaling of gate oxide thickness into 1 nm regime, reported GD measurement can not give correct measurement due to gate tunneling leakage current. Here, we provide a simple(More)
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