Hung Lin Kao

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—In this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure (NF min) of RF MOSFETs. A low NF min of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-µm MOSFETs, without de-embedding. Using an analytical expression for NF min , we have developed a self-consistent dc current–voltage, S-parameter,(More)
In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different(More)
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