Hung-Chang Hsu

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Understanding the growth mechanisms of nanowires is essential for their successful implementation in advanced devices applications. In situ ultrahigh-vacuum transmission electron microscopy has been applied to elucidate the interaction mechanisms of titanium disilicide nanowires (TiSi2 NWs) on Si(111) substrate. Two phenomena were observed: merging of the(More)
Effects of Ag doping and thermal annealing temperature on thermoelectric transport properties of Bi2(Se,Te)3 compounds are investigated. On the basis of the comprehensive analysis of carrier concentration, Hall mobility, and lattice parameter, we identified two Ag-related interstitial (Agi) and substitutional (AgBi) defects that modulate in different ways(More)
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