Huiyong Hu

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The strained Si technology is a research emphasis in the modern microelectronic field. Hole mobility is an important physical parameter in strained Si materials. In this paper, an analytical model of the hole mobility of (001)-biaxially tensile strained-Si material grown on relaxed Si<inf>1&#x2212;x</inf>Ge<inf>x</inf> (0&#x2264;x&#x2264;0.4) substrates, as(More)
Abstract: This paper addresses the stability issue of the meshed DC distributed power systems (DPS) with constant power loads (CPLs) and proposes a stability enhancement method based on virtual harmonic resistance. In previous researches, the network dynamics of the meshed DC DPS are often ignored, which affects the derivation of the equivalent system(More)
An analytical expression for collector resistance of a novel vertical SiGe partially-depleted HBT on thin SOI is obtained under negative substrate biases. The resistance decreases slowly with the increase of substrate-collector bias and the influence on transit frequency is trivial and acceptable. The model is consistent with simulation result and found to(More)
Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and non-polar optical phonon, the model of total scattering rate of strained Si/(101) Si<inf>1&#x2212;x</inf>Ge<inf>x</inf> is established. By calculating the hole(More)
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