Huimei Zhou

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—A nonplanar Flash memory architecture with ul-trahigh-density (∼1.5 × 10 12 cm −2) NiSi nanocrystals (NCs) as the floating gate is demonstrated using a triangular-shaped Si nanowire array as the memory transistor channel. The memory device shows good programming, erasing, and retention characteristics. This result suggests that nonplanar devices can extend(More)
—A TiSi 2 nanocrystal (NC) memory was fabricated. TiSi 2 NCs were synthesized on SiO 2 by annealing Ti covered Si NCs. Compared to the reference Si NC memory, both experiment and simulation results show that TiSi 2 NC memory exhibits larger memory window, faster writing and erasing, and longer retention lifetime as a result of the metallic property of the(More)
Discrete NiSi nanocrystals were synthesized by rapid thermal oxygen annealing of very thin Si/Ni/Si films on a SiO 2 tunneling layer. They were used to fabricate metal–oxide–semiconductor capacitor memory. Electrical properties of the memory device such as programming, erasing and retention were characterized and good performance was achieved.
Di-block copolymer synthesized Co/Al 2 O 3 core-shell nanocrystal (NC) capacitors were fabricated in order to study the temperature-dependent electron transport. The capacitance-voltage memory window is shown to increase proportionally with the substrate temperature, saturating at 3.5 V, at 175 C. At elevated operating temperatures, the tunneling of(More)
An ordered Co/ Al 2 O 3 core-shell nanocrystal ͑NC͒ nonvolatile memory device was fabricated. Self-assembled diblock copolymer process aligned the NCs with uniform size. Co/ Al 2 O 3 core-shell NCs were formed using atomic layer deposition of Al 2 O 3 before and after the ordered Co NC formation. Compared to Co NC memory, Co/ Al 2 O 3 core-shell NC memory(More)
A memory structure based on self-aligned silicon nanocrystals (Si NCs) grown over Al(2)O(3)-covered parallel-aligned carbon nanotubes (CNTs) by gas source molecular beam epitaxy is reported. Electrostatic force microscopy characterizations directly prove the charging and discharging of discrete NCs through the Al(2)O(3) layer covering the CNTs. A CNT field(More)
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