Huiling Shang

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Introduction MOSFETs with a high-mobility channel are attractive candidates for advanced CMOS device structures, since it is becoming increasingly difficult to enhance Si CMOS performance through traditional device scaling. The lower effective mass and higher mobility of carriers in germanium (Ge) compared with silicon (Si) (2x higher mobility for electrons(More)
This paper reviews the current critical issues on the fabrication of Ge surface channel MOSFET devices. Compared with surface channel Ge MOSFETs, strained Ge buried channel structures can be integrated with fewer processing challenges to achieve significantly enhanced hole mobility and an improved electron mobility. The device design and scalability of the(More)
Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, we discuss device scaling options beyond convention device structures. We discuss ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic.(More)
Gate-induced-drain-leakage (GIDL) current in 45 nm state-of-the-art MOSFETs is characterized in detail. For the current technology node with a 1.2 V power-supply voltage, the GIDL current is found to increase in MOSFETs with higher channel-doping levels. In contrast to the classical GIDL current generated in the gate-to-drain overlap region, the observed(More)
Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, the authors discussed device scaling options beyond convention device structures. Recent progress in advanced gate stack, ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET(More)
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