Learn More
Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-)(More)
Superior electronic and thermal properties have made InAlN/GaN high-electron-mobility transistors (HEMTs) an attractive candidate for power electronics applications. However, their high gate leakage current remains a serious challenge affecting the reliability and performance of these heterostructures. Leakage paths through dislocations or by percolation(More)
Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n þ metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R C) and sheet resistance (R sh) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R C values (<0.09 X mm) were obtained, with a minimum R(More)
p s s current topics in solid state physics c status solidi AlGaN/GaN high-electron-mobility transistors (HEMT) have been grown by radio frequency molecular beam epi-taxy (RF-MBE) on 3 " Si substrates. A record low contact resistance R c ~ 0.11 .mm has been achieved for GaN HEMTs on Si by using non alloyed ohmic contacts re-grown by MBE. Owing to the low(More)