Hugh P. McAdams

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New design techniques facilitate a high reliability 1T1C 8Mb ferroelectric random access memory with 0.71u<sup>2</sup> cell operating at 1.5V on a 130nm 5LM Cu process. Zero cancellation increases the cell interrogation voltage by using a nonswitching ferroelectric capacitor to remove charge from the bit line that compensates the linear charge from the cell(More)
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